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BTS 4141D
Smart High-Side Power Switch 1 Channel: 1 x 200m
Features * Short circuit protection * Current limitation * Overload protection Product Summary Overvoltage protection Operating voltage Vbb(AZ) Vbb(on) RON 47 200 V m 12...45 V
On-state resistance * Overvoltage protection (including load dump) * Undervoltage shutdown with autorestart and hysteresis * Switching inductive loads * Clamp of negative voltage at output with inductive loads * CMOS compatible input * Thermal shutdown with restart * ESD - Protection * Loss of GND and loss of Vbb protection * Very low standby current * Reverse battery protection with external resistor * Improved electromagnetic compatibility (EMC)
P-TO252-5-1
Application
* All types of resistive, inductive and capacitive loads * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
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2004-01-27
BTS 4141D
Block Diagram
+ Vbb
Voltage source V Logic Voltage sensor
R in
TAB/3
Overvoltage protection
Current limit
Gate protection
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads
OUT
Temperature sensor
1
5
IN
ESD
Logic
Load
GND
miniPROFET(R)
Load GND
4
Signal GND
Pin 1 2 3 4 5 TAB
Symbol OUT NC Vbb GND IN Vbb
Function Output to the load not connected connected with TAB Logic ground Input, activates the power switch in case of logic high signal Positive power supply voltage
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2004-01-27
BTS 4141D Maximum Ratings Parameter at Tj = 25C, unless otherwise specified Supply voltage Continuous input voltage2) Load current (Short - circuit current, see page 5) Current through input pin (DC) Reverse current through GND-pin 3) Operating temperature Storage temperature Power dissipation 4) Inductive load switch-off energy dissipation 4)5) single pulse Tj = 125 C, IL = 0.5 A Load dump protection 5) VLoadDump6)= VA + VS RI=2, td=400ms, VIN= low or high, VA=13,5V RL = 47 Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin All other pins 1 5 83 kV VLoaddump V Vbb VIN IL I IN -I GND Tj T stg Ptot EAS -0,31)...48 -10...Vbb self limited 5 -0.5 internal limited -55 ... +150 1.4 12 W J A mA A C V Symbol Value Unit
1defined by P tot 2At V > Vbb, the input current is not allowed to exceed 5 mA. IN 3defined by P tot 4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for V bb connection. PCB is vertical without blown air. 5not subject to production test, specified by design 6V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in GND connection. A resistor for the protection of the input is integrated.
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2004-01-27
BTS 4141D Electrical Characteristics Parameter at Tj = -40...125 C, Vbb = 15...30 V unless otherwise specified Thermal Characteristics Thermal resistance @ 6 cm 2 cooling area 1) Thermal resistance, junction - case Load Switching Capabilities and Characteristics On-state resistance Tj = 25 C, IL = 0.5 A Tj = 125 C Nominal load current2) Device on PCB 1) Turn-on time Turn-off time Slew rate on Slew rate off to 90% VOUT to 10% VOUT 10 to 30% VOUT , 70 to 40% VOUT , ton toff dV/dton -dV/dtoff 1 2 1 2 75 150 V/s 50 100 s RL = 47 , VIN = 0 to 10 V RL = 47 , VIN = 10 to 0 V RL = 47 , Vbb = 15 V RL = 47 , Vbb = 15 V IL(nom) RON 0.7 150 270 200 320 A m Rth(JA) RthJC 60 3 K/W K/W Symbol min. Values typ. max. Unit
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for V bb connection. PCB is vertical without blown air. 2Nominal load current is limited by the current limitation ( see page 5 )
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2004-01-27
BTS 4141D Electrical Characteristics Parameter at Tj = -40...125 C, Vbb = 15...30 V unless otherwise specified Operating Parameters Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Standby current Tj = -40...85 C, V IN 1,2 V Tj = 125 C1) Operating current Leakage output current (included in Ibb(off)) VIN 1,2 V Protection Functions2) Initial peak short circuit current limit Tj = -40 C, Vbb = 20 V, tm = 150 s Tj = 25 C Tj = 125 C Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), I bb = 4 mA Overvoltage protection 3) Ibb = 4 mA Thermal overload trip temperature 4) Thermal hysteresis Tjt Tjt 135 10 C K VON(CL) Vbb(AZ) 47 47 52 V IL(SCr) IL(SCp) 0.7 1.4 1.1 2.1 A IGND IL(off) Ibb(off) 10 1 3.5 25 50 1.6 10 mA A A Vbb(on) Vbb(under) Vbb(u rst) Vbb(under) 12 7 0.5 45 10.5 11 V Symbol min. Values typ. max. Unit
1higher current due temperature sensor 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 3see also V ON(CL) in circuit diagram 4 higher operating temperature at normal function available Page 5
2004-01-27
BTS 4141D Electrical Characteristics Parameter at Tj = -40...125 C, Vbb = 15...30 V unless otherwise specified Input Continuous input voltage1) Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current VIN 1,8 V On state input current Input delay time at switch on Vbb Input resistance (see page 8) Reverse Battery Reverse battery voltage3)2) RGND = 0 RGND = 150 Continuous reverse drain current2) Tj = 25 C Drain-source diode voltage (VOUT > Vbb) IF = 1 A -VON 0.6 1.2 V IS -Vbb 0.3 45 1 A V IIN(on) td(Vbbon) RI VIN VIN(T+) VIN(T-) VIN(T) IIN(off) 20 150 1.5 340 3 110 5 s k -102) 1.82 0.2 Vbb 3.0 A V Symbol min. Values typ. max. Unit
1At V > Vbb, the input current is not allowed to exceed 5 mA. IN 2not subject to production test, guaranted by design 3defined by P tot
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BTS 4141D EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test. Test Conditions: If not other specified the test circuitry is the minimal functional configuration without any external components for protection or filtering. Supply voltage: Load: Operation mode: DUT-Specific.: Vbb = 13.5V RL = 220 PWM DC On/Off RGND Frequency: 100Hz / Duty Cycle: 50% Temperature: Ta = 23 5C ;
Fast electrical transients Acc. ISO 7637 Test Pulse 1 2 3a 3b 41) 5 Test Level -200 V +200 V -200 V + 200 V -7 V 175 V Test Results On Off Pulse Cycle Time and Generator Impedance 500ms ; 10 500ms ; 10 100ms ; 50 100ms ; 50 0,01 400ms ; 2
C C C C C E (70V)
C C C C C E (70V)
The test pulses are applied at Vbb
Definition of functional status Class C E Content All functions of the device are performed as designed after exposure to disturbance. One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit.
Test circuit:
Pulse Bat.
Vbb IN PROFET OUT
GND
R GND
RL
1Supply voltage V = 12 V instead of 13,5 V. bb Page 7
2004-01-27
BTS 4141D Conducted Emission
Acc. IEC 61967-4 (1 / 150 method) Typ. Vbb-Pin Emission at DC-On with 150 -matching network
100 90 80 70 60 50
1 5 0 o h m C la s s 6 1 5 0 o h m C la s s 1 V B B , n o is e f lo o r VBB, ON
dBV
1 5 0 / 8 -H
40 30 20 10 0 -1 0 -2 0 0 ,1 1 10 100 1000
1 5 0 / 1 3 -N
f / MHz
Typ. Vbb -Pin Emission at PWM-Mode with 150 -matching network
100 90 80 70 60 50
1 5 0 o h m C la s s 6 1 5 0 o h m C la s s 1 V B B , n o is e f lo o r VBB, PW M
dBV
1 5 0 / 8 -H
40 30 20 10 0 -1 0 -2 0 0 ,1 1 10 100 1000 1 5 0 / 1 3 -N
f / MHz
Test circuit:
5H 150-Network
Vbb IN PROFET GND OUT
5H
R GND
R
For defined decoupling and high reproducibility a defined choke (5H at 1 MHz) is inserted between supply and Vbb-pin. Page 8
2004-01-27
BTS 4141D Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Failure criteria: Forward Power CW Amplitude and frequency deviation max. 10% at Out
Typ. Vbb-Pin Susceptibility at DC-On/Off
40 35 30 25
dBm
20 15 10 5 0 1 10 100 1000
L im it VBB, ON VBB, OFF
D e v ic e : Load: O -M o d e : C o u p lin g P o in t : M o n it o r in g : M o d u la t io n :
BTS 4142 47 O hm s O N / O FF / PW M VBB O ut CW
f / MHz
Typ. Vbb -Pin Susceptibility at PWM-Mode
40 35 30 25
dBm
20 15 10 5 0 1 10 100 1000
L im it VBB, PW M
D e v ic e : Load: O -M o d e : C o u p lin g P o in t : M o n it o r in g : M o d u la t io n :
BTS 4142 47 O hm s ON / OFF / PW M VBB O ut CW
f / MHz
Test circuit:
5H HF
Vbb
150
IN
PROFET GND
OUT
5H
150
6,8nF
R GND
RL
6,8nF
For defined decoupling and high reproducibility the same choke and the same 150 -matching network as for the emission measurement is used. Page 9
2004-01-27
BTS 4141D Terms
Ibb
V Z V ON
Inductive and overvoltage output clamp
+ V bb
Vbb I IN IN V V bb PROFET OUT
OUT GND
IL
VON
IN
GND R GND I GND VOUT
VON clamped to 47 V min.
Input circuit (ESD protection) Overvoltage protection of logic part
Vbb R IN I
IN + Vbb V
Z2
Logic
I GND
I
GND
R GND
The use of ESD zener diodes as voltage clamp at DC conditions is not recommended
VZ2=V bb(AZ)=47V min.,
optional Signal GND
Reverse battery protection
- Vbb RI
R I=3 k typ., R GND=150
IN
OUT Logic
Power Inverse Diode
GND RGND
optional Signal GND
RL
Power GND
RGND=150, RI=3k typ., Temperature protection is not active during inverse current
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2004-01-27
BTS 4141D GND disconnect Inductive Load switch-off energy dissipation
E bb
Vbb IN PROFET OUT
IN Vbb PROFET OUT
E AS ELoad
GND V bb V IN V GND
=
GND ZL
{
R L
L
EL
ER
GND disconnect with GND pull up
Energy stored in load inductance: EL = 1/2 * L * IL2 While demagnetizing load inductance, the energy dissipated in PROFET is E AS = E bb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0:
Vbb IN PROFET OUT
GND
E AS =
IL * L IL * R L * ( V b b + | V O U T ( C L )| ) * ln (1 + ) | V O U T ( C L )| 2 * RL
V bb
V IN
V GND
Vbb disconnect with charged inductive load
Vbb high IN PROFET OUT
GND
V
bb
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2004-01-27
BTS 4141D Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Parameter: D=tp/T
10
2
Typ. transient thermal impedance Z thJA=f(tp) @ min. footprint Parameter: D=tp/T
10 2
K/W
D=0.5 D=0.2
K/W
D=0.5 D=0.2
10 1
10 1
D=0.1 D=0.05 D=0.02
D=0.05 D=0.02 D=0.01
Z thJA
ZthJA
D=0.1
10 0
10 0
D=0.01
10 -1
D=0
10 -1
D=0
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10
s
10
4
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10
tp
s
10
4
tp
Typ. on-state resistance RON = f(Tj) ; Vbb = 15 V ; Vin = high
300
Typ. on-state resistance RON = f(V bb); IL = 0.5A ; V in = high
300
m
m
125C
RON
200
RON
200
150
150
25C
100
100
-40C
50
50
0 -40
-20
0
20
40
60
80
100
C Tj
140
0 0
5
10
15
20
25
30
35
40
V Vbb
50
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2004-01-27
BTS 4141D Typ. turn on time ton = f(Tj ); R L = 47
100
Typ. turn off time toff = f(Tj); RL = 47
120
s
15V 30V
s
15...30V
ton
60
toff
80
60 40 40
20
20
0 -40
-20
0
20
40
60
80
100
C Tj
140
0 -40
-20
0
20
40
60
80
100
C Tj
140
Typ. slew rate on dV/dton = f(Tj ) ; RL = 47
2
Typ. slew rate off dV/dtoff = f(Tj); RL = 47
4
V/s
1.6
V/s
dV dton
1.4 1.2
30V
-dV dtoff
15V
3
2.5
1 0.8 0.6
2
1.5
30V
1 0.4 0.2 0 -40 0.5
15V
-20
0
20
40
60
80
100
C Tj
140
0 -40
-20
0
20
40
60
80
100
C Tj
140
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2004-01-27
BTS 4141D Typ. initial peak short circuit current limit IL(SCp) = f(Tj) ; Vbb = 20 V; tm = 150 s
2
Typ. initial short circuit shutdown time toff(SC) = f(Tj,start) ; Vbb = 20V
1000
A
1.6
ms
800
I L(SCp)
1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40
t off(SC)
-20 0 20 40 60 80 100 140
700 600 500 400 300 200 100 0 -40
C Tj
-20
0
20
40
60
80
100
C Tj
140
Typ. initial peak short circuit current limit IL(SCp) = f(Vbb); tm = 150s
2
Typ. input current IIN(on/off) = f(Tj); V bb = 15 V; VIN = low/high VINlow 1,8V; VINhigh = 5V
60
A
-40C
A
25C
I L(SCp)
1.5
1.25
125C
1
I IN
40
on
30
off
0.75 20 0.5 10 0.25
0 0
5
10
15
20
25
30
35
40
V Vbb
50
0 -40
-20
0
20
40
60
80
100
C Tj
140
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2004-01-27
BTS 4141D Typ. input current IIN = f(VIN); Vbb =15 V
60
-40C
Typ. input threshold voltage VIN(th) = f(T j) ; V bb = 15 V
3
on
A
25C
V
off
IIN
40
VIN(th)
20
125C
2
30
1.5
20
1
10
0.5
0 0
2.5
5
7.5
10
12.5
15
V VIN
0 -40
-20
0
20
40
60
80
100
C Tj
140
Typ. input threshold voltage VIN(th) = f(Vbb) ; Tj = 25C
3
Typ. standby current I bb(off) = f(T j) ; V bb = 32V ; VIN 1,2 V
22
A
V
on
18
V IN(th)
2
off
Ibb(off)
50
16 14 12 10
1.5
1
8 6
0.5
4 2
0 0
10
20
30
V Vbb
0 -40
-20
0
20
40
60
80
100
C Tj
140
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2004-01-27
BTS 4141D Maximum allowable inductive switch-off energy, single pulse EAS = f(IL ); Tjstart = 125C
30 4
Typ. leakage current IL(off) = f(Tj) ; Vbb = 32V ; VIN 1,2 V
J
A
3
EAS
20
IL(off)
0.2 0.4 0.6 0.8 1 1.4
2.5
15
2
1.5 10 1 5 0.5
0 0
A IL
0 -40
-20
0
20
40
60
80
100
C Tj
140
Typ. input delay time at switch on Vbb td(Vbbon) = f(Vbb)
400
s
td(Vbbon)
300
250
200
150
100
50
0 0
5
10
15
20
25
30
35
40
V Vbb
50
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2004-01-27
BTS 4141D
Timing diagrams
Figure 1a: Vbb turn on:
IN
Figure 2b: Switching a lamp
IN
Vbb
V
OUT
IL t t d(Vbbon)
IL
t
Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition
Figure 2c: Switching an inductive load
IN
IN
V OUT
90%
VOUT
t on dV/dton t off dV/ dtoff
10%
IL
IL t
t
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2004-01-27
BTS 4141D
Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling
IN
Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling
IN
V OUT Output short to GND
V OUT normal operation Output short to GND
I
L
I
L(SCp)
I
I L(SCr) t
L
I
L(SCr) t
Heating up of the chip may require several milliseconds, depending on external conditions.
Figure 4: Overtemperature: Reset if Tj < Tjt
Figure 5: Undervoltage shutdown and restart
IN
IN
VOUT
10,5V
V bb
V out
TJ
t
t
t d(Vbbon)
t d(Vbbon)
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2004-01-27
BTS 4141D
Package and ordering code
all dimensions in mm
Sales code Ordering code,
6.5 +0.15 -0.10 2.3 +0.05 -0.10 B A 1 0.1 0...0.15 5.4 0.1
BTS 4141D Q67060-S6098
0.9 +0.08 -0.04
(4.17) 1 0.1
9.9 0.5 6.22 -0.2
0.8 0.15
0.15 max per side
0.51 min
5x0.6 0.1 1.14
0.5 +0.08 -0.04 0.1
4.56
0.25
M
AB
GPT09161
All metal surfaces tin plated, except area of cut.
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2004-01-27

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